GSA1576A Datasheet, PDF (1/3 Pages) GTM CORPORATION – PNP EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2005/02/18
REVISED DATE :
GSA1576A
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GSA1576A is designed for use in driver stage of AF amplifier and general purpose amplification.
Features
Ô¦Complements the GSC4081
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0
0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Symbol
Tj
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Tstg
VCBO
VCEO
Emitter to Base Voltage
Collector Current
Total Power Dissipation
VEBO
IC
PD
Characteristics at Ta = 25к
Symbol
BVCBO
Min.
-60
Typ.
-
Max.
-
BVCEO
BVEBO
ICBO
-50
-
-
-6
-
-
-
-
-100
IEBO
VCE(sat)
hFE
fT
Cob
-
-
-100
-
-
-500
120
-
560
-
140
-
-
4.0
5.0
Unit
V
V
V
nA
nA
mV
MHz
pF
Ratings
Unit
+150
ć
-55~+150
ć
-60
V
-50
V
-6
V
-150
mA
225
mW
Test Conditions
IC=-50uA
IC=-1mA
IE=-50uA
VCB=-60V
VEB=-6V
IC=-50mA, IB=-5mA
VCE=-6V, IC=-1mA
VCE=-12V, IE=-2mA, f=100MHz
VCB=-12V, f=1MHz,IE=0
Classification Of hFE
Rank
Range
5AQ
120 - 270
5AR
180 - 390
5AS
270 – 560
1/3