GPN2907A Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP EPITAXIAL PLANAR TRANSISTOR

GPN2907A
ISSUED DATE :2003/12/15
REVISED DATE :2004/11/29B
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PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GPN2907A is designed for general purpose amplifier and high speed, medium-power switching applications
Features
*Low Collect Saturation voltage.
*High Speed Switching.
*For Complementary Use with NPN Type GPN2222A.
Package Dimensions
D
E
S1
TO-92
b1
SEATING
PLANE
C
e1 b
e
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Electrical Characteristics at Ta = 25к
Symbol
Min.
Typ.
BVCBO
-60
-
BVCEO
-60
-
BVEBO
-5
-
ICBO
-
-
ICEX
-
-
VCE(sat)1
-
-0.2
VCE(sat)2
VBE(sat)1
VBE(sat)2
-
-0.5
-
-
-
-
hFE1
hFE2
75
-
100
-
hFE3
100
hFE4
100
180
hFE5
50
-
fT
200
-
Cob
-
-
REF.
A
S1
b
b1
C
Millimeter
Min.
Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
Ratings
+150
-55 ~ +150
-60
-60
-5
-600
625
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150
1.390
2.42
2.66
Unit
ć
ć
V
V
V
mA
mW
Max.
-
-
-
-10
-50
-0.4
-1.6
-1.3
-2.6
-
-
300
-
-
8
Unit
V
V
V
nA
nA
V
V
V
V
MHZ
pF
Test Conditions
IC=-10uA, IE=0
IC=-10mA, IB=0
IC=-10uA, IC=0
VCB=-50V, IC=0
VCE-30V, VBE=-0.5
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
VCE=-10V, IC=-100uA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-150mA
VCE=-10V, IC=-500mA
VCE=-20V,IC=-50mA,f=100MHZ
VCB=-10V,F=1MHZ
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