GMPSA94S Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2006/10/13
REVISED DATE :
GMPSA94S
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GMPSA94S is designed for application that requires high voltage.
Features
*High Breakdown Voltage:-400(Min) at IC=-1mA
*High current Gain: IC=-300mA at 25к
*Complementary to GMPSA44S
Package Dimensions
D
TO-92
E
S1
b1
S E A T IN G
PLANE
C
e1
b
e
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150 1.390
2.42
2.66
Absolute Maximum Ratings (Ta = 25к, unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
-400
V
Collector to Emitter Voltage
VCEO
-400
V
Emitter to Base Voltage
VEBO
-6
V
Collect Current(DC)
IC
-300
mA
Junction Temperature
Tj
+150
ć
Storage Temperature Range
TsTG
-55 ~ +150
ć
Total Power Dissipation
PD
625
mW
Electrical Characteristics (Ta = 25к, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-400
-
-
V
IC=-100uA, IE=0
BVCEO
-400
-
-
V
IC=-1mA, IB=0
BVEBO
-6
-
-
V
IE=-10uA, IC=0
ICBO
-
-
-100
nA
VCB=-400V, IE=0
IEBO
-
-
-100
nA
VEB=-4V, IC=0
ICES
-
-
-500
nA
VCE=-400V, VBE=0
VCE(sat)1
-
-
-350
mV IC=-1mA, IB=-0.1mA
VCE(sat)2
-
-
-500
mV IC=-10mA, IB=-1mA
VCE(sat)3
-
-
-750
mV IC=-50mA, IB=-5mA
VBE(sat)
-
-
-750
mV IC=-10mA, IB=-1mA
hFE1
40
-
-
VCE=-10V, IC=-1mA
hFE2
50
-
300
VCE=-10V, IC=-10mA
hFE3
45
-
-
VCE=-10V, IC=-50mA
hFE4
20
-
-
VCE=-10V, IC=-100mA
Classification of hFE2
Rank
N
Range
50-300
VCE(sat)2:IC=-10mA, IB=-1mA -
hFE: VCE=3V, IC=100mA
-
NS
70-300
-
>50
SD
70-210
<200mV
-
SUM
120-300
-
-
GMPSA94S
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