GMBTH10 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2005/03/16
REVISED DATE :2005/11/22B
GMBTH10
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GMBTH10 is designed for use in VHF & UHF oscillators and VHF mixer in tuner of a TV receiver.
Features
Ô¦High frequency
Ô¦Very low capacitance
Package Dimensions
TPU.34)QBDLBHF*
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0°
10°
Ratings
Unit
+150
ć
-55~+150
ć
30
V
25
V
3
V
50
mA
225
mW
Electrical Characteristics(Ta = 25к,unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
30
-
-
V
IC=100uA, IE=0
BVCEO
25
-
-
V
IC=1mA, IB=0
BVEBO
3
-
-
V
IE=10uA, IC=0
ICBO
-
-
100
nA
VCB=25V, IE=0
IEBO
-
-
100
nA
VEB=2V, IC=0
VCE(sat)
-
-
500
mV IC=4mA, IB=0.4mA
VBE(on)
-
-
950
mV VCE=10V, IC=4mA
hFE
60
-
-
VCE=10V, IC=4mA
fT
650
-
-
MHz VCE=10V, IC=4mA, f=100MHz
Cob
-
0.8
-
pF VCB=10V, f=1MHz
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