GMBTA13 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL SILICON TRANSISTOR

CORPORATION ISSUED DATE :2003/07/15
REVISED DATE :2006/05/09B
G M B TA1 3
NPN EPITAXIAL SILICON TRANSISTOR
Description
The GMBTA13 is designed for Darlington Amplifier Transistor.
Features
*High D.C. Current Gain
*Collector-Emitter Voltage VCES=30V
Package Dimensions
TPU.34)QBDLBHF*
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0°
10°
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCES
Emitter to Base Voltage
VEBO
Thermal Resistance Junction to Ambient
R JA
Thermal Resistance Junction to Case
R JC
Collector Current
IC
Total Power Dissipation
PD
Ratings
+150
-55 ~ +150
30
30
10
556
170
500
225
Unit
к
к
V
V
V
к /W
к /W
mA
mW
Electrical Characteristics (Ta = 25к,unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
30
-
-
V
IC=100uA ,IE=0
BVCES
30
-
-
V
IC=100uA ,VBE=0
BVEBO
10
-
-
V
IE=10uA ,IC=0
ICBO
-
-
100
nA VCB=30V, IE = 0
IEBO
-
-
100
nA VEB=10V, Ic = 0
*VCE(sat)
-
-
1.5
V
IC=100mA, IB=0.1mA
*VBE(on)
-
-
2.0
V
VCE=5V, IC=100mA
*hFE1
5k
-
-
VCE=5V, IC=10mA
*hFE2
10k
-
-
VCE=5V, IC=100mA
fT
125
-
-
MHz VCE=5V, IC=10mA, f=100MHz
Cob
-
-
6
pF VCB=10V, IE=0, f=1MHz
Pulse Test: Pulse WidthЉ380us, Duty CycleЉ2%
1/2