GMBTA05 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN SILICON TRANSISTOR

1/2
G M B TA0 5
NPN SILICON TRANSISTOR
Description
The GMBTA05 is Amplifier Transistor.
Package Dimensions
TPU.34)QBDLBHF*
Absolute Maximum Ratings at Ta = 25к
REF
A
B
C
D
E
F
Millimeter
Min. Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0̓
10̓
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
ć
Storage Temperature
Tstg
-55~+150
ć
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
60
V
Emitter to Base Voltage
VEBO
4
V
Collector Current
IC
500
mA
Total Power Dissipation
PD
225
mW
Characteristics at Ta = 25к
Symbol
BVCBO
Min.
60
Typ.
-
BVCEO
60
-
BVEBO
ICBO
4
-
-
-
ICEO
-
-
*VCE(sat)
VBE(sat)
-
-
-
-
*hFE1
50
-
*hFE2
fT
50
-
100
-
Max.
-
-
-
100
100
250
1.2
-
-
Unit
Test Conditions
V
IC=100uA
V
IC=1mA
V
IE=100uA
nA
VCB=60V
nA
VCE=60V
mV
IC=100mA, IB=10mA
V
IC=100mA, VCE=1V
VCE=1V, IC=10mA
VCE=1V, IC=100mA
MHz VCE=2V, IC=10mA, f=100MHz
*Pulse Test:Pulse width 380us,Duty Cycle 2%