GMBT9013 Datasheet, PDF (1/3 Pages) GTM CORPORATION – NPN EPITAXIAL TRANSISTOR

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GMBT9013
NPN EPITAXIAL TRANSISTOR
Description
The GMBT9013 is designed for use in 1W output amplifier of portable radios in class B push-pull operation.
Package Dimensions
TPU.34)QBDLBHF*
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Characteristics at
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Ta = 25к
Symbol
BVCBO
BVCEO
Min.
40
20
Typ.
-
-
Max.
-
-
BVEBO
ICBO
IEBO
5
-
-
-
-
100
-
-
100
VCE(sat)
VBE(sat)
VBE(on)
-
-
0.6
-
-
1.2
-
-
0.9
HFE1
HFE2
fT
112
180
300
40
-
-
100
-
-
Cob
-
-
8
Classification Of hFE1
Rank
hFE
G
112-166
H
144-202
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0
0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40
-
0.85 1.15
0̓
10̓
Ratings
Unit
+150
ć
-55 ~ +150
ć
40
V
20
V
5
V
500
mA
225
mW
Unit
V
V
V
nA
nA
V
V
V
MHz
pF
Test Conditions
IC=100uA , IE=0
IC=1mA, IB=0
IE=100uA, IC=0
VCE=25V, IE=0
VEB=3V, IC=0
IC=500mA, IB=50mA
IC=500mA, IB=50mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V,IC=500mA
VCE=1V, IC=10mA,f=100MHz
VCB=10V, f=1MHz, IE=0
L
176-300