GMBT8550L Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – NPN EPITAXIAL PLANAR TRANSISTOR

GMBT8550L
PNP EPITAXIAL TRANSISTOR
Description
The GMBT8550L(large current) is designed for general purpose amplifier applications.
Package Dimensions
ISSUED DATE :2004/08/27
REVISED DATE :
TPU.34)QBDLBHF*
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0
0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40
-
0.85 1.15
0̓
10̓
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
Characteristics at Ta = 25к
Symbol
BVCBO
Min.
-40
Typ.
-
Max.
-
BVCEO
-25
-
-
BVEBO
-6
-
-
ICBO
-
-
-100
IEBO
-100
VCE(sat)
-
-
-0.5
VBE(sat)
-
-
-1.2
VBE(on)
-
-
-1
hFE
45
-
-
hFE
120
-
500
hFE
40
-
-
fT
100
-
-
Cob
-
-
10
Classification Of hFE
Rank
hFE
BLC
120 - 200
BLD
160 - 300
Ratings
Unit
+150
ć
-55 ~ +150
ć
-40
V
-25
V
-6
V
1.5
A
250
mW
Unit
V
V
V
nA
nA
V
V
V
MHz
pF
Test Conditions
IC=-100uA
IC=-2mA
IE=-100uA
VCB=-35V, IE=0
VEB=-6V,IC=0
IC=-800mA, IB=-80mA
IC=-800mA, IB=-80mA
VCE=-1V,IC=-10mA
VCE=-1V, IC=-5mA
VCE=-1V, IC=-100mA
VCE=-1V, IC=-800mA
VCE=-10V, IC=-20mA, f=100MHz
VCB=-10V, f=1MHz
BLE
250 - 500
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