GMBT8550 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

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GMBT8550
PNP EPITAXIAL TRANSISTOR
Description
The GMBT8550 is designed for general purpose amplifier applications.
Package Dimensions
TPU.34)QBDLBHF*
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0
0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40
-
0.85 1.15
0̓
10̓
Ratings
Unit
+150
ć
-55 ~ +150
ć
-25
V
-20
V
-5
V
-700
mA
225
mW
Characteristics at
Symbol
BVCBO
Min.
-25
BVCEO
-20
BVEBO
-5
ICBO
-
IEBO
-
VCE(sat)
-
VBE(on)
-
hFE
100
fT
150
Cob
-
Ta = 25к
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-1
-100
-500
-1
500
-
10
Classification Of hFE
Rank
hFE
B9C
100 - 200
B9D
150 - 300
Unit
V
V
V
uA
nA
mV
V
MHz
pF
Test Conditions
IC=-10uA
IC=-1mA
IE=-10uA
VCB=-20V
VEB=-6V
IC=-500mA, IB=-50mA
VCE=-1V, IC=-150mA
VCE=-1V, IC=-150mA
VCE=-10V, IC=-20mA, f=100MHz
VCB=-10V, f=1MHz
B9E
250 - 500