GMBT5089 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

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GMBT5089
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GMBT5089 is designed for low noise, high gain, general purpose amplifier applications.
Package Dimensions
Absolute Maximum Ratings
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Characteristics at
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
hFE1
hFE2
hFE3
fT
Cob
Min.
30
25
4.5
-
-
-
-
400
450
400
50
-
Ta = 25к
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
50
100
500
800
1200
-
-
4
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0̓
10̓
Ratings
Unit
+150
ć
-55 ~ +150
ć
30
V
25
V
4.5
V
50
mA
225
mW
Unit
V
V
V
nA
nA
mV
mV
MHz
pF
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=15V
VEB=4.5V
IC=10mA, IB=1mA
IC=10mA, IB=1mA
VCE=5V, IC=0.1mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=0.5mA, f=20MHz
VCB=5V, f=1MHz
*Pulse Test:Pulse Width <=380us, Duty Cycle <=2%