GMBT5087 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2005/06/28
REVISED DATE :
GMBT5087
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GMBT5087 is designed for low noise, high gain and general purpose amplifier applications.
Package Dimensions
TPU.34)QBDLBHF*
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0
0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0̓
10̓
Ratings
Unit
+150
ć
-55~+150
ć
-50
V
-50
V
-3
V
-50
mA
225
mW
Electrical Characteristics(Ta = 25к,unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-50
-
-
V
IC=-100uA , IE=0
BVCEO
-50
-
-
V
IC=-1mA, IB=0
BVEBO
-3
-
-
V
IE=-10uA ,IC=0
ICBO1
-
-
-10
nA
VCB=-10V, IE=0
ICBO2
-
-
-50
nA
VCB=-35V, IE=0
*VCE(sat)
-
-
-300
mV IC=-10mA, IB=-1mA
*VBE(sat)
-
-
-850
mV IC=-10mA, IB=-1mA
*hFE1
250
-
800
VCE=-5V, IC=-0.1mA
*hFE2
250
-
-
VCE=-5V, IC=-1mA
*hFE3
250
-
-
VCE=-5V, IC=-10mA
fT
40
-
-
MHz VCE=-5V, IC=-0.5mA, f=100MHz
Cob
-
-
4.0
pF VCB=-5V, f=100kHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
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