GMBT4403 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP EPITAXIAL PLANAR TRANSISTOR

CORPORATION ISSUED DATE :2001/09/20
REVISED DATE :2006/02/08B
GMBT4403
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GMBT4403 is designed for general purpose applications requiring high breakdown voltage.
Features
Ô¦High DC Current Gain: 100-300 at 150mA
Ô¦Complementary to GMBT4401
Package Dimensions
TPU.34)QBDLBHF*
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0
0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40
-
0.85 1.15
0°
10°
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
к
Storage Temperature
Tstg
-55 ~ +150
к
Collector to Base Voltage
VCBO
-40
V
Collector to Emitter Voltage
VCEO
-40
V
Emitter to Base Voltage
VEBO
-5
V
Collector Current
IC
-600
mA
Total Power Dissipation
PD
225
mW
Electrical Characteristics (Ta = 25к, unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-40
-
-
V
IC=-100uA
BVCEO
-40
-
-
V
IC=-1mA
BVEBO
-5
-
-
V
IE=-10uA
ICEX
-
-
-100
nA
VCE=-35V, VBE=-0.4V
*VCE(sat)1
-
-
-400
mV
IC=-150mA, IB=-15mA
*VCE(sat)2
-
-
-750
mV
IC=-500mA, IB=-50mA
*VBE(sat)1
-
-
-950
mV
IC=-150mA, IB=-15mA
*VBE(sat)2
-
-
-1.3
V
IC=-500mA, IB=-50mA
*hFE1
30
-
-
VCE=-1V, IC=-0.1mA
*hFE2
60
-
-
VCE=-1V, IC=-1mA
*hFE3
100
-
-
VCE=-1V, IC=-10mA
*hFE4
100
-
300
VCE=-2V, IC=-150mA
*hFE5
20
-
-
VCE=-2V, IC=-500mA
fT
200
-
-
MHz VCE=-10V, IC=-20mA, f=100MHz
Cob
-
-
8.5
pF
VCE=-10V, f=1MHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
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