GMBT4401 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

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GMBT4401
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GMBT4401 is designed for general purpose switching amplifier applications.
Package Dimensions
TPU.34)QBDLBHF*
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Characteristics at
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Ta = 25к
Symbol
BVCBO
Min.
60
Typ.
-
Max.
-
BVCEO
BVEBO
ICEX
40
-
-
6
-
-
-
-
100
VCE(sat)1
VCE(sat)2
VBE(sat)1
-
-
0.4
-
-
750
650
-
850
VBE(sat)2
hFE1
hFE2
-
-
1.2
20
-
-
40
-
-
hFE3
hFE4
hFE5
80
-
-
100
-
300
40
-
-
fT
250
-
-
Cob
-
-
6.5
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0
0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40
-
0.85 1.15
0̓
10̓
Ratings
Unit
+150
ć
-55 ~ +150
ć
60
V
40
V
6
V
600
mA
225
mW
Unit
V
V
V
nA
V
mV
mV
V
MHz
pF
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCE=35V, VBE= -0.4V
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=1V, IB=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=150mA
VCE=2V, IC=500mA
VCE=10V, IC=20mA, f=100MHz
VCB=5V, f=1MHz