GMBT3838 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2005/05/09
REVISED DATE :
GMBT3838
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GMBT3838 is designed for high frequency amplifier transistor.
Features
Ô¦High transition frequency
ԦSmall rbb’-Cc and high gain
Ô¦Small NF
Package Dimensions
TPU.34)QBDLBHF*
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0
0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0̓
10̓
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
ć
Storage Temperature
Tstg
-55~+150
ć
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
11
V
Emitter to Base Voltage
VEBO
3
V
Collector Current
IC
50
mA
Total Power Dissipation
PD
200
mW
Electrical Characteristics(Ta = 25к,unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
20
-
-
V
IC=10uA, IE=0
BVCEO
11
-
-
V
IC=1mA, IB=0
BVEBO
3
-
-
V
IE=10uA,IC=0
ICBO
-
-
500
nA
VCB=10V, IE=0
IEBO
-
-
500
nA
VEB=2V, IC=0
VCE(sat)
-
-
500
mV IC=10mA, IB=5mA
hFE
56
-
400
VCE=10V, IC=5mA
fT
1.4
3.2
-
GHz VCE=10V, IE=10mA, f=500MHz
Cob
-
0.8
1.5
pF
VCB=10V, f=1MHz
rbb-Cc
-
4
12
ps
VCB=10V, IC=10mA, f=31.8MHz
NF
-
3.5
-
dB VCE=6V, IC=2mA, f=500MHz, Rg=50
Classification Of hFE
Rank
A
Range
56 ~ 220
B
200 ~ 400
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