GMBT194A Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

CORPORATION ISSUED DATE :2006/06/07
REVISED DATE :
GMBT194A _{NPN SILICON PLANAR MEDIUM POWER TRANSISTOR}
Description
The GMBT194A is designed for medium power amplifier applications.
Features
Ô¦1 Amp continuous current
Ô¦Complementary to GMBT195A
Package Dimensions
TPU.34)QBDLBHF*
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0°
10°
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
к
Storage Temperature
Tstg
-65~+150
к
Collector to Base Voltage
VCBO
40
V
Collector to Emitter Voltage
VCEO
40
V
Emitter to Base Voltage
VEBO
5
V
Collector Current (DC)
IC
1
A
Collector Current (Pulse)
IC
2
A
Total Power Dissipation(Note1)
PD
500
mW
Note 1.Device mounted on FR-4=1.6*1.6*0.06in
Electrical Characteristics (Ta = 25к, unless otherwise stated)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
40
*BVCEO
40
BVEBO
5
ICBO
-
ICES
-
IEBO
-
*VCE(sat)1
-
*VCE(sat)2
-
*VBE(sat)
-
*VBE(on)
-
*hFE1
300
*hFE2
300
*hFE3
200
*hFE4
35
fT
150
Cob
-
Classification Of hFE2
Rank
P
Range
300 ~ 700
-
-
-
-
-
-
-
100
-
100
-
100
-
0.3
-
0.5
-
1.1
-
1.0
-
-
-
900
-
-
-
-
-
-
-
10
Q
500 ~ 900
V
IC=100uA , IE=0
V
IC=10mA, IB=0
V
IE=100uA ,IC=0
nA VCB=30V, IE=0
nA
VCES=30V
nA VEB=4V, IC=0
V
IC=500mA, IB=50mA
V
IC=1A, IB=100mA
V
IC=1A, IB=100mA
V
VCE=5V, IC=1A
VCE=5V, IC=1mA
VCE=5V, IC=500mA
VCE=5V, IC=1A
VCE=5V, IC=2A
MHz VCE=10V, IC=50mA, f=100MHz
pF VCB=10V, IE=0, f=1MHz
*Measured under pulse condition. Pulse width=300 s, Duty CycleЉ2%
GMBT194A
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