GMBT1815 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

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GMBT1815
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GMBT1815 is Designed for use Driver Stage of AF Amplifier and General Purpose Application.
Package Dimensions
TPU.34)QBDLBHF*
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Symbol
Tj
Storage Temperature
Tstg
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC
Total Power Dissipation
PD
Characteristics at Ta = 25к
Symbol
BVCBO
BVCEO
Min.
60
50
Typ.
-
-
Max.
-
-
BVEBO
ICBO
5
-
-
-
-
100
IEBO
-
-
100
VCE(sat)
VBE(sat)
-
-
250
-
-
1.0
hFE1
120
-
700
hFE2
25
-
-
hFE3
80
-
-
fT
80
-
-
Cob
-
-
3.5
Classification of hFE1
Rank
C4Y
Range
120 - 240
C4G
200 - 400
REF
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0
0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0̓
10̓
Ratings
Unit
+150
ć
-55~+150
ć
60
V
50
V
5
V
150
mA
250
mW
Unit
V
V
V
nA
nA
mV
V
MHz
pF
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=60V
VEB=5V
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=6V, IC=2mA
VCE=6V, IC=150mA
VCE=1V, IC=10mA
VCE=10V, IC=1mA, f=100MHz
VCB=10V, f=1MHz
C4B
350 - 700