GMBT1132 Datasheet, PDF (1/3 Pages) GTM CORPORATION – PNP EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2005/06/28
REVISED DATE :
G M B T 11 3 2
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GMBT1132 is designed for general purpose amplifier applications.
Features
Ô¦Low VCE(sat)=-200mV(Typ.) (IC/IB=-500mA/-50mA)
Package Dimensions
TPU.34)QBDLBHF*
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current (DC)
IC
Collector Current (Pulse)
IC
Total Power Dissipation
PD
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0
0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0̓
10̓
Ratings
Unit
+150
ć
-55~+150
ć
-40
V
-32
V
-5
V
-1
A
-2
A
225
mW
Electrical Characteristics(Ta = 25к,unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-40
-
-
V
IC=-50uA , IE=0
BVCEO
-32
-
-
V
IC=-1mA, IB=0
BVEBO
-5
-
-
V
IE=-50uA ,IC=0
ICBO
-
-
-500
nA
VCB=-20V, IE=0
IEBO
-
-
-500
nA
VEB=-4V, IC=0
*VCE(sat)
-
-200
-500
mV IC=-500mA, IB=-50mA
*hFE
82
-
390
VCE=-3V, IC=-100mA
fT
-
150
-
MHz VCE=-5V, IC=-50mA, f=30MHz
Cob
-
20
30
pF
VCB=-10V, IE=0, f=1MHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
Classification Of hFE
Rank
Range
B32P
82 - 180
B32Q
120 - 270
B32R
180 - 390
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