GMBD2004-A-C-S Datasheet, PDF (1/2 Pages) E-Tech Electronics LTD – S U R FA C E MO U N T, SWI T C H I NG D I O D E V O LTAG E 1 0 0 V, C U R R E N T 2 0 0mA

ISSUED DATE :2002/11/12
REVISED DATE :2004/11/30B
GMBD2004\A\C\S
S U RFAC E MO U NT, S WIT C HI NG D IO DE
VOLTAGE 300V, CURRENT 0. 225A
Description
The GMBD2004\A\C\S are general purpose diodes fabricated in planar technology, and encapsulated in small plastic SMD SOT-23
package,
Package Dimensions
TPU.34)QBDLBHF*
Style: Pin1: Anode, 2: No Connection, 3: Cathode
REF.
Millimeter
Min.
Max.
REF.
Millimeter
Min. Max.
A
2.70
3.10
G
1.90 REF.
B
2.40
2.80
H
1.00
1.30
C
1.40
1.60
K
0.10
0.20
D
0.35
0.50
J
0.40
-
E
0
0.10
L
0.85
1.15
F
0.45
0.55
M
0̓
10̓
Absolute Maximum Ratings at Ta = 25к unless otherwise specified
Parameter
Symbol
Ratings
Unit
Repetitive Peak Reverse Voltage
VRRM
300
V
Continuous reverse voltage
VR(VRW M)
240
V
RMS Reverse Voltage
VR(RMS)
170
V
Forward Continuous Current
IFM
225
mA
Non-Repetitive Peak Forward surge Current @t =1.0us
@t=1.0s
IFSM
4
1
A
Power Dissipation
PD
350
mW
Thermal Resistance Junction to Ambient Air
R JA
357
ć/W
Storage Temperature Range
Tj,Tstg
-65 ~ +150
ć
Characteristics at Ta = 25к unless otherwise specified
Characteristics
Symbol
Min.
Max.
Unit
Test Conditions
0.85
V
IF = 20mA
Forward Voltage
VF
-
1
V
IF = 100mA
-
1.25
V
IF = 225mA
Reverse Current
nA
VR = 240V
IR
-
100
uA
VR = 240V ,Tj=150ć
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 0 volt.
2. Measured at applied forward current of 30mA, reverse current of 30mA, RL=100Ó¨ and recovery to IRR=-3mA.
3. ESD sensitive product handling required.
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