GMA94 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2005/03/25
REVISED DATE :
GMA94
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GMA94 is designed for application requires high voltage.
Features
Ô¦High voltage: VCEO=400V (min) at IC=1mA
ԦHigh current gain: IC=300mA at 25ć
Ô¦Complementary with GMA44
Package Dimensions
SOT-89
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Storage Temperature Range
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current(DC)
Total Power Dissipation
Symbol
Tj
TsTG
VCBO
VCEO
VEBO
IC
PD
Electrical Characteristics(Ta = 25к)
Symbol
Min.
Typ.
Max.
BVCBO
-400
-
-
BVCEO
-400
-
-
BVEBO
-6
-
-
ICBO
-
-
-100
ICES
-
-
-500
IEBO
-
-
-100
*VCE(sat)1
-
-
-350
*VCE(sat)2
-
-
-500
*VCE(sat)3
-
-
-750
*VBE(sat)
-
-
-750
*hFE1
40
-
-
*hFE2
50
-
300
*hFE3
45
-
-
*hFE4
40
-
-
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5q TYP.
0.70 REF.
Ratings
Unit
+150
ć
-55 ~ +150
ć
-400
V
-400
V
-6
V
-500
mA
1
W
Unit
Test Conditions
V
IC=-100uA, IE=0
V
IC=-1mA, IB=0
V
IE=-100uA, IC=0
nA
VCB=-400V, IE=0
nA
VCE=-400V, VBE=0
nA
VEB=-6V, IC=0
mV
IC=-1mA, IB=-0.1mA
mV
IC=-10mA, IB=-1mA
mV
IC=-50mA, IB=-5mA
mV
IC=-10mA, IB=-1mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-50mA
VCE=-10V, IC=-100mA
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
GMA94
1/2