GMA44 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

GMA44
ISSUED DATE :2001/10/04
REVISED DATE :2004/11/18C
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GMA44 is designed for application requires for high voltage.
Package Dimensions
SOT-89
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Symbol
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
Emitter to Base Voltage
VCEO
VEBO
Collector Current
IC
Total Power Dissipation
PD
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5q TYP.
0.70 REF.
Ratings
Unit
+150
ć
-55 ~ +150
ć
500
V
400
V
6.0
V
300
mA
1.0
W
Characteristics at
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICES
IEBO
VCE(sat)1
VCE(sat)2
VBE(sat)
hFE1
hFE2
hFE3
hFE4
Cob
Min.
500
400
6
-
-
-
-
-
-
40
50
45
40
-
Ta = 25к
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
4
Max.
-
-
-
100
500
100
375
750
750
-
300
-
-
6
Unit
Test Conditions
V
IC=100uA
V
IC=1mA
V
IE=10uA
nA
VCB=400V
nA
VCB=400V
nA
VEB=4V
mV
IC=20mA, IB=2mA
mV
IC=50mA, IB=5 mA
mV
IC=1 0mA, IB=1mA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=50mA
VCE=10V, IC=100mA
pF
VCE=20V, f=1MHz
GMA44
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