GM8550 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP EPITAXIAL TRANSISTOR

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GM8550
PNP EPITAXIAL TRANSISTOR
Description
The GM8550 is designed for use in 1W output amplifier of portable radios in class B push-pull operation.
Package Dimensions
Millimeter
Millimeter
Min. Max.
Min. Max.
A
4.4
4.6
G
3.00 REF.
B 4.05 4.25 H
1.50 REF.
C 1.50 1.70 I 0.40 0.52
D 1.30 1.50 J 1.40 1.60
E 2.40 2.60 K 0.35 0.41
F 0.89 1.20 L
5q TYP.
M
0.70 REF.
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Base Current
Total Power Dissipation
Symbol
Tj
Tstg
BVCBO
BVCEO
BVEBO
IC
IB
PD
Characteristics at Ta = 25к
Symbol
BVCBO
BVCEO
Min.
-40
-25
Typ.
-
-
Max.
-
-
BVEBO
ICBO
IEBO
-6
-
-
-
-
-100
-
-
-100
VCE(sat)
VBE(sat)
VBE(on)
-
-
-0.5
-1.2
-
-
-1
hfe1
45
-
-
hfe2
120
-
500
hfe3
40
-
-
fT
100
-
-
Classification Of hFE
Rank
hFE
C
120 - 200
D
160 - 300
Ratings
Unit
+150
ć
-55 ~ +150
ć
-40
V
-25
V
-6
V
-1.5
A
-0.5
A
1
W
Unit
V
V
V
nA
nA
V
V
V
MHz
Test Conditions
IC=-100uA
IC=-2mA
IE=-100uA
VCB=-35V
VEB=-6V
IC=-0.8A, IB=-80mA
IC=-0.8A, IB=-80mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-5mA
VCE=-1V, IC=-100mA
VCE=-1V, IC=-800mA
VCE=-10V, IC=-20mA, f=100MHz
E
250 - 500