GM669A Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2005/03/25
REVISED DATE :
GM669A
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GM669A is designed for low frequency power amplifier complementary pair with GM649A.
Package Dimensions
SOT-89
Absolute Maximum Ratings at TA = 25к
Parameter
Junction Temperature
Storage Temperature Range
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current(DC)
Collect Current(Pulse)
Total Power Dissipation
Symbol
Tj
TsTG
VCBO
VCEO
VEBO
IC
IC
PD
Electrical Characteristics(TA = 25к)
Symbol
Min.
Typ.
Max.
BVCBO
180
-
-
BVCEO
160
-
-
BVEBO
5
-
-
ICBO
-
-
10
*VCE(sat)
-
-
1
*VBE(on)
-
-
1.5
*hFE1
60
-
200
*hFE2
30
-
-
fT
-
140
-
Cob
-
14
-
Classification Of hFE1
Rank
B
hFE1
60 ~ 120
C
100 ~ 200
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5q TYP.
0.70 REF.
Ratings
Unit
+150
ć
-55 ~ +150
ć
180
V
160
V
5
V
1.5
A
3
A
1
W
Unit
V
V
V
uA
V
V
MHz
pF
Test Conditions
IC=1mA, IE=0
IC=10mA, IB=0
IE=1mA, IC=0
VCB=160V, IE=0
IC=600mA, IB=50mA
VCE=5V, IC=150mA
VCE=5V, IC=150mA
VCE=5V, IC=500mA
VCE=5V, IC=10mA, f=100MHz
VCB=10V, f=1MHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
GM669A
1/2