GM4403 Datasheet, PDF (1/2 Pages) Guilin Strong Micro-Electronics Co., Ltd. – SOT-23

CORPORATION ISSUED DATE :2004/12/17
REVISED DATE :
GM4403
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GM4403 is designed for general purpose switching and amplifier applications.
Features
Ô¦Complementary to GM4401
ԦHigh Power Dissipation: 1W at 25ć
Ô¦High DC Current Gain: 100-300 at 150mA
Package Dimensions
SOT-89
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Collector to Base Voltage at Ta=25к
Collector to Emitter Voltage at Ta=25к
Emitter to Base Voltage at Ta=25к
Collector Current at Ta=25к
Total Power Dissipation at Ta=25к
Tstg
VCBO
VCEO
VEBO
IC
PD
Characteristics at Ta = 25к
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5q TYP.
0.70 REF.
Ratings
Unit
+150
ć
-55 ~ +150
ć
-40
V
-40
V
-5
V
-600
mA
1
W
Symbol
Min.
BVCBO
-40
BVCEO
-40
BVEBO
-5
ICEX
-
*VCE(sat)1
-
*VCE(sat)2
-
*VBE(sat)1
-750
*VBE(sat)2
-
*hFE1
30
*hFE2
60
*hFE3
100
*hFE4
100
*hFE5
20
fT
200
Cob
-
Classification Of hFE4
Rank
Range
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-400
-750
-950
-1.3
-
-
-
300
-
-
8.5
Unit
V
V
V
nA
mV
mV
mV
V
MHz
pF
A
100-210
B
190-300
Test Conditions
IC=-100uA
IC=-1mA
IE=-10uA
VCE=-35V, VBE=-0.4V
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50Ma
VCE=-1V, IC=-0.1mA
VCE=-1V, IC=-1mA
VCE=-1V, IC=-10mA
VCE=-2V, IC=-150mA
VCE=-2V, IC=-500mA
VCE=-10V, IC=-20mA, f=100MHz
VCE=-10V, f=1MHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
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