GM3019 Datasheet, PDF (1/1 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

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GM3019
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GM3019 is designed for general purpose amplifier applications and switching requiring collector currents 1A.
Package Dimensions
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Symbol
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
Collector Current
Total Power Dissipation
VEBO
IC
PD
Characteristics at Ta = 25к
Symbol
Min.
Typ.
Max.
BVCBO
140
-
-
BVCEO
80
-
-
BVEBO
7
-
-
ICBO
-
-
50
IEBO
50
VCE(sat)
-
-
200
VBE(sat)
-
-
1.1
hfe1
50
-
-
hfe2
90
-
-
hfe3
100
-
300
hfe4
50
hfe5
15
Cob
-
-
12
fT
100
-
-
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5q TYP.
0.70 REF.
Ratings
Unit
+150
ć
-55 ~ +150
ć
140
V
80
V
7
V
1
A
1
W
Unit
V
V
V
nA
nA
mV
V
pF
MHz
Test Conditions
IC=100uA , IE=0
IC=30mA. IB=0
IE=100uA, IC=0
VCB=90V
VBE=5V
IC=150mA, IB=15mA
IC=150mA, IB=15mA
VCE=10V, IC=0.1mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCE=10V, IC=1000mA
VCB=10V, ,IE=0V,f=1MHz
VCE=50V, IC=50mA, f=100MHz
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
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TEL : [phone] FAX : [phone]
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