GM195A Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

CORPORATION ISSUED DATE :2006/06/07
REVISED DATE :
GM195A
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
Description
The GM195A is designed for medium power amplifier applications.
Features
Ô¦1 Amp continuous current
Ô¦Complementary to GM194A
Package Dimensions
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5q TYP.
0.70 REF.
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
к
Storage Temperature
Tstg
-55~+150
к
Collector to Base Voltage
VCBO
-40
V
Collector to Emitter Voltage
VCEO
-40
V
Emitter to Base Voltage
VEBO
-5
V
Collector Current (DC)
IC
-1
A
Collector Current (Pulse)
IC
-2
A
Total Power Dissipation
PD
1
W
Electrical Characteristics (Ta = 25к, unless otherwise stated)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-40
-
-
V
IC=-100uA , IE=0
*BVCEO
-40
-
-
V
IC=-10mA, IB=0
BVEBO
-5
-
-
V
IE=-100uA ,IC=0
ICBO
-
-
-100
nA
VCB=-30V, IE=0
ICES
-
-
-100
nA
VCES=-30V
IEBO
-
-
-100
nA
VEB=-4V, IC=0
*VCE(sat)1
-
-
-0.2
V
IC=-100mA, IB=-1mA
*VCE(sat)2
-
-
-0.35
V
IC=-500mA, IB=-20mA
*VCE(sat)3
-
-
-0.5
V
IC=-1A, IB=-100mA
*VBE(sat)
-
-
-1.1
V
IC=-1A, IB=-50mA
*VBE(on)
-
-
-1.0
V
VCE=-5V, IC=-1A
*hFE1
300
-
-
VCE=-5V, IC=-1mA
*hFE2
300
-
900
VCE=-5V, IC=-100mA
*hFE3
250
-
-
VCE=-5V, IC=-500mA
*hFE4
160
-
-
VCE=-5V, IC=-1A
*hFE5
30
-
-
VCE=-5V, IC=-2A
fT
150
-
-
MHz VCE=-10V, IC=-50mA, f=100MHz
Cob
-
-
10
pF
VCB=-10V, IE=0, f=1MHz
*Measured under pulse condition. Pulse width=300 s, Duty CycleЉ2%
GM195A
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