GM1898 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

GM1898
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GM1898 is designed for switching applications.
Package Dimensions
SOT-89
ISSUED DATE :2004/12/03
REVISED DATE :
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Symbol
Tj
Storage Temperature
Collector to Base Voltage
Tstg
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
Collector Current
Total Power Dissipation
VEBO
IC
ICP (Single pulse Pw=20ms)
PD
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5q TYP.
0.70 REF.
Ratings
Unit
+150
ć
-55 ~ +150
ć
100
V
80
V
5.0
V
1
A
2
A
500
mW
Characteristics at
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
f_T
Cob
Min.
100
80
5
-
-
-
82
-
Ta = 25к
Typ.
-
-
-
-
-
-
-
100
25
Max.
-
-
-
1
1
400
390
-
-
Classification Of hFE
Rank
P
hFE
82-180
Q
120-270
Unit
V
V
V
uA
uA
mV
MHZ
pF
Test Conditions
IC=50uA
IC=1mA
IE=50uA
VCB=80V
VEB=4V
IC=500mA, IB=20mA
VCE=3V, IC=500mA
VCE=10V,IC=50mA,f=100MHZ
VCB=10V,IE=0, f=1MHz
R
180-390
GM1898
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