GM1766 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

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GM1766
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GM1766 is suited for the output stage of 0.5W audio, voltage regulator, and relay driver.
Package Dimension
Absolute Maximum Ratings
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage at Ta=25
к_{Collector to Emitter Voltage at Ta=25}
к_{Emitter to Base Voltage at Ta=25к}
Collector Current at Ta=25к
Total Power Dissipation at Ta=25к
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Characteristics at
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE
FT
Cob
Min.
40
32
5
-
-
-
-
82
-
-
Ta = 25к
Typ.
-
-
-
-
-
0.5
-
-
100
30
Max.
-
-
-
1
1
0.8
2
390
-
-
Classification Of hFE
Rank
Range
P
82-180
Q
120-270
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5q TYP.
0.70 REF.
Ratings
Unit
+150
ć
-55 ~ +150
ć
40
V
32
V
5.0
V
2
A
1.2
W
Unit
V
V
V
uA
uA
V
V
MHz
Pf
Test Conditions
IC=50uA ,IE=0
IC=1mA,IB=0
IE=50uA
VCB=20V
VEB=4V
IC=2A, IB=0.2A
IC=2A, IB=0.2A
VCE=3V, IC=0.5A
VCE=5V, IC=50mA, f=100MHz
VCB=10V,IE=0, f=1MHz
R
180-390