GM1616A Datasheet, PDF (1/3 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

CORPORATION ISSUED DATE :2004/08/02
REVISED DATE :
GM1616A
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GM1616A is designed for audio frequency power amplifier and medium speed switching.
Package Dimensions
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5q TYP.
0.70 REF.
Absolute Maximum Ratings Ta = 25к
Parameter
Ratings
Unit
Collector to Base Voltage
VCBO
120
V
Collector to Emitter Voltage
VCEO
60
V
Emitter to Base Voltage
VEBO
6
V
Collect Current(DC)
IC
1
A
Collect Current*(Pulse)
IC
2
A
Junction Temperature
Tj
+150
ć
Storage Temperature Range
TsTG
-55 ~ +150
ć
Total Power Dissipation
PD
750
mW
Characteristics at Ta = 25к
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
VBE(on)
*HFE1
*HFE2
fT
Cob
ton
ts
tf
Min.
120
60
6
-
-
-
-
600
135
81
100
-
-
-
-
Typ.
-
-
-
-
150
0.9
640
-
-
160
-
0.07
0.95
0.07
Max.
-
-
-
100
100
300
1.2
700
600
-
-
19
-
-
-
Unit
V
V
V
nA
nA
mV
mV
mV
MHz
pF
uS
uS
uS
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VBE=60V
VBE=6V
lC=1A,IB=50mA
IC=1A, IB=50mA
VCE=2V,IC=50mA
VCE=2V,IC=100mA
VCE=2V,IC=1A
VCE=2V,IC=100mA
VCB=10V ,IE=0,f=1MHz
VCE=10V,IC=100mA
IB1=-IB2=10mA
VBE(off)=2~-3V
Classificaton of hFE1
Rank
Range
Y
135-270
G
200-400
L
300-600
*Pulse Test : Pulse Width <=380us, Duty Cycle <=2%
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