GM157 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR

CORPORATION ISSUED DATE :2005/08/19
REVISED DATE :
GM157
PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR
Description
The GM157 is designed for general purpose switching and amplifier applications.
Features
Ô¦-60 Volt V_CEO
Ô¦3 Amp continuous current
Ô¦Low saturation voltage
Package Dimensions
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5q TYP.
0.70 REF.
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Total Power Dissipation
Tj
Tstg
VCBO
VCEO
VEBO
IC
IC
PD
Ratings
+150
-55~+150
-80
-60
-5
-3
-6
1.2
Unit
ć
ć
V
V
V
A
A
W
Electrical Characteristics(Ta = 25к,unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-80
-
-
V
IC=-100uA , IE=0
*BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
-60
-
-
V
IC=-10mA, IB=0
-5
-
-
V
IE=-100uA ,IC=0
-
-
-100
nA
VCB=-60V, IE=0
-
-
-100
nA
VEB=-4V, IC=0
-
-150
-300
mV IC=-1A, IB=-100mA
-
-450
-600
mV IC=-3A, IB=-300mA
*VBE(sat)
*VBE(on)
*hFE1
*hFE2
*hFE3
*hFE4
-
-0.9
-1.25
-
-0.8
-1.0
70
200
100
200
300
80
170
40
150
V
IC=-1A, IB=-100mA
V
VCE=-2V, IC=-1A
VCE=-2V, IC=-50mA
VCE=-2V, IC=-500mA
VCE=-2V, IC=-1A
VCE=-2V, IC=-2A
fT
100
140
-
MHz VCE=-5V, IC=-100mA, f=100MHz
Cob
-
-
30
pF
VCB=-10V, IE=0, f=1MHz
ton
toff
-
40
-
-
450
-
ns
VCC=-10V, IC=-500mA, IB1=IB2=-50mA
*Measured under pulse condition. Pulse widthЉ300 s, Duty CycleЉ2%
Spice parameter data is available upon request for this device.
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