GM156 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR

CORPORATION ISSUED DATE :2006/03/02
REVISED DATE :
GM156
NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR
Description
The GM156 is designed for general purpose switching and amplifier applications.
Features
Ô¦60 Volt V_CEO
Ô¦3 Amp continuous current
Ô¦Low saturation voltage
Package Dimensions
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5° TYP.
0.70 REF.
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
к
Storage Temperature
Tstg
-55~+150
к
Collector to Base Voltage
VCBO
80
V
Collector to Emitter Voltage
VCEO
60
V
Emitter to Base Voltage
VEBO
5
V
Collector Current (DC)
IC
3
A
Collector Current (Pulse)
IC
6
A
Total Power Dissipation
PD
1.2
W
Electrical Characteristics (Ta = 25к, unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
80
-
-
V
IC=100uA, IE=0
*BVCEO
60
-
-
V
IC=10mA, IB=0
BVEBO
5
-
-
V
IE=100uA, IC=0
ICBO
-
-
100
nA
VCB=60V, IE=0
IEBO
-
-
100
nA
VEB=4V, IC=0
*VCE(sat)1
-
0.12
0.3
V IC=1A, IB=0.1A
*VCE(sat)2
-
0.43
0.6
V IC=3A, IB=0.3A
*VBE(sat)
-
0.9
1.25
V
IC=1A, IB=0.1A
*VBE(on)
-
0.8
1.0
V
IC=1A, VCE=2V
*hFE1
70
200
-
VCE=2V, IC=50mA
*hFE2
100
200
300
VCE=2V, IC=500mA
*hFE3
80
170
-
VCE=2V, IC=1A
*hFE4
40
80
-
VCE=2V, IC=2A
fT
140
175
-
MHz VCE=5V, IC=100mA, f=100MHz
Cob
-
-
30
pF VCB=10V, f=1MHz
ton
toff
-
45
-
-
800
-
ns
VCC=10V, IC=500mA, IB1=IB2=50mA
*Measured under pulse condition. Pulse width 300 s, Duty Cycle 2%
Spice parameter data is available upon request for this device.
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