GM1386 Datasheet, PDF (1/3 Pages) GTM CORPORATION – PNP EPITAXIAL PLANAR TRANSISTOR

CORPORATION ISSUED DATE :2004/02/09
REVISED DATE :2005/08/24B
GM1386
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GM1386 is an epitaxial planar type PNP silicon transistor.
Features
Ô¦Low collector saturation voltage : VCE (sat)= -0.35V(Typ.) @ IC/IB=-4A/-0.1A
Ô¦Excellent DC current gain characteristics.
Package Dimensions
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5q TYP.
0.70 REF.
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Collector Current (Pulse)*¹
IC
Total Power Dissipation
PD
* 1. Single pulse, PW=10ms.
* 2. When mounted on a 40*40*0.7 mm ceramic board.
Ratings
+150
-55~+150
-30
-20
-6
-5
-10
0.5 (2.0*²)
Unit
ć
ć
V
V
V
A
A
W
Electrical Characteristics(Ta = 25к,unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-30
-
-
V
IC=-50uA , IE=0
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Cob
-20
-
-
V
IC=-1mA, IB=0
-6
-
-
V
IE=-50uA ,IC=0
-
-
-0.5
uA
VCB=-20V, IE=0
-
-
-0.5
uA
VEB=-5V, IC=0
-
-
-1.0
V
IC=-4A, IB=-100mA
82
-
390
VCE=-2V, IC=-500mA
-
120
-
MHz VCE=-6V, IE=50mA, f=30MHz
-
60
-
pF
VCB=-20V, IE=0, f=1MHz
Classification Of hFE
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
Rank
P
Q
R
Range
82 ~ 180
120 ~ 270
180 ~ 390
GM1386
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