GLBCX53 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP SILICON EPITAXIAL TRANSISTOR

ISSUED DATE :2005/08/18
REVISED DATE :2005/11/21B
GLBCX53 PNP SILICON EPITAXIAL TRANSISTOR
Description
The GLBCX53 is designed for use in driver stages of audio amplifiers and medium power general purpose
amplification.
Features
Ô¦Collector-Emitter Voltage: VCEO=-80V
Ô¦Complementary to GLBCP56
Package Dimensions
SOT-223
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature Range
TsTG
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collect Current(DC)
IC
Total Power Dissipation
PD
Electrical Characteristics (Ta = 25к)
Symbol
Min.
Typ.
Max.
BVCBO
-100
-
-
BVCEO
-80
-
-
BVEBO
-5
-
-
ICBO
-
-
-100
IEBO
-
-
-100
*VCE(sat)1
-
-
-500
*VBE(on)
-
-
-1000
*hFE1
63
-
-
*hFE2
63
-
250
*hFE3
40
-
-
fT
100
-
-
Classification Of hFE2
Rank
A
Range
63 - 160
B
100 - 250
Unit
V
V
V
nA
nA
mV
mV
MHz
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0° 10°
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13°TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Ratings
Unit
+150
к
-65 ~ +150
к
-100
V
-80
V
-5
V
1
A
1.5
W
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-30V, IE=0
VEB=-5V, IC=0
IC=-500mA, IB=-50mA
IC=-500mA, VCE=-2V,
VCE=-2V, IC=-5mA
VCE=-2V, IC=-150mA
VCE=-2V, IC=-500mA
VCE=-5V, IC=-10mA, f=100MHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
GLBCX53
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