GLBCP69 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP SILICON EPITAXIAL TRANSISTOR

CORPORATION ISSUED DATE :2005/07/15
REVISED DATE :
GLBCP69
PNP SILICON EPITAXIAL TRANSISTOR
Description
The GLBCP69 is designed for use in low voltage and medium power applications.
Features
Ô¦V_CEO : -20V
Ô¦I_C :1A
Package Dimensions
SOT-223
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0̓
10̓
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13̓TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Ratings
+150
-65~+150
-25
-20
-5
-1
1.5
Unit
ć
ć
V
V
V
A
W
Electrical Characteristics(Ta = 25к,unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VBE(on)
*hFE1
-25
-
-
V
IC=-100uA , IE=0
-20
-
-
V
IC=-1mA, IB=0
-5
-
-
V
IE=-10uA ,IC=0
-
-
-10
uA
VCB=-25V, IE=0
-
-
-10
uA
VEB=-5V, IC=0
-
-
-500
mV IC=-1A, IB=-100mA
-
-
-1.0
V
VCE=-1V, IC=-1A
50
-
VCE=-10V, IC=-5mA
*hFE2
*hFE3
fT
85
-
375
VCE=-1V, IC=-500mA
60
-
VCE=-1V, IC=-1A
-
60
-
MHz VCE=-5V, IC=-10mA
*Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
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