GLBCP56 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL SILICON TRANSISTOR

ISSUED DATE :2002/11/20
REVISED DATE :2006/01/02D
GLBCP56 NPN SILICON EPITAXIAL TRANSISTOR
Description
The GLBCP56 is designed for use in audio amplifiers and medium power amplifications.
Features
Ô¦Collector-Emitter Voltage: VCEO=80V
Ô¦Complementary to GLBCX53
Package Dimensions
SOT-223
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature Range
TsTG
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collect Current(DC)
IC
Total Power Dissipation
PD
Electrical Characteristics (Ta = 25к)
Symbol
Min.
Typ.
Max.
BVCBO
100
-
-
BVCEO
80
-
-
BVEBO
5
-
-
ICBO
-
-
100
IEBO
-
-
100
*VCE(sat)1
-
-
500
*VBE(on)
-
-
1000
*hFE1
63
-
-
*hFE2
63
-
250
*hFE3
40
-
-
fT
100
-
-
Classification Of hFE2
Rank
10
Range
63 - 160
16
100 - 250
Unit
V
V
V
nA
nA
mV
mV
MHz
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0° 10°
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13°TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Ratings
Unit
+150
к
-65 ~ +150
к
100
V
80
V
5
V
1
A
1.5
W
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=30V, IE=0
VEB=5V, IC=0
IC=500mA, IB=50mA
IC=500mA, VCE=2V,
VCE=2V, IC=5mA
VCE=2V, IC=150mA
VCE=2V, IC=500mA
VCE=5V, IC=10mA
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
GLBCP56
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