GL965 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

GL965
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GL965 is designed for use as AF output amplifier and flash unit.
Package Dimensions
SOT-223
ISSUED DATE :2004/04/25
REVISED DATE :2004/12/08B
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0̓
10̓
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13̓TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Absolute Maximum Ratings
Parameter
Junction Temperature
Storage Temperature
Symbol
Tj
Tstg
Absolute Maximum Ratings at Ta = 25к
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (Continuous)
Collector Current (Peak PT=10mS)
Total Power Dissipation at Ta = 25к
BVCBO
BVCEO
BVEBO
IC
IC
PD
Characteristics at Ta = 25к
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE1
*hFE2
fT
Cob
Min.
40
20
7
-
-
-
230
150
-
-
Typ.
-
-
-
-
-
0.35
-
-
150
-
Max.
-
-
-
0.1
0.1
1
800
-
-
50
Classification Of hFE1
Rank
Range
Q
230-380
R
340-600
Ratings
Unit
+150
ć
-55 ~ +150
ć
40
V
20
V
7.0
V
5
A
8
A
2
W
Unit
V
V
V
uA
uA
V
MHz
pF
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=60V
VEB=7V
IC=3A, IB=0.1A
VCE=2V, IC=0.5A
VCE=2V, IC=2A
VCE=6V, IE=50mA
VCB=20V, f=1MHz
* Pulse Test: Pulse WidthЉ380us, Duty CycleЉ2%
S
560-800
GL965
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