GL949 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP SILICON PLANAR HIGH CURRENT TRANSISTOR

CORPORATION ISSUED DATE :2006/11/20
REVISED DATE :
GL949
PNP SILICON PLANAR HIGH CURRENT TRANSISTOR
Description
The GL949 is designed for general purpose switching and amplifier applications.
Features
Ô¦6Amps continuous current, up to 20Amps pulse current
Ô¦Very low saturation voltages
Package Dimensions
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0° 10°
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13°TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
к
Storage Temperature
Tstg
-55~+150
к
Collector to Base Voltage
VCBO
-50
V
Collector to Emitter Voltage
VCEO
-30
V
Emitter to Base Voltage
VEBO
-6
V
Collector Current (DC)
IC
-5.5
A
Collector Current (Pulse)
ICM
-20
A
Total Power Dissipation
PD
3
W
*The power which can be dissipated assuming the device is mounted in typical manner on a PCB with copper equal to 2 inches x 2 inches.
Electrical Characteristics (Ta = 25к, unless otherwise stated)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-50
-
-
V
IC=-100uA , IE=0
BVCER
-50
-
-
V
IC=-1uA, RB 1k
BVCEO
-30
-
-
V
IC=-10mA, IB=0
BVEBO
-6
-
-
V
IE=-100uA ,IC=0
ICBO
-
-
-50
nA
VCB=-40V, IE=0
ICER
-
-
-50
nA VCB=-40V, R 1k
IEBO
-
-
-10
nA
VEB=-6V, IC=0
*VCE(sat)1
-
-
-75
mV IC=-500mA, IB=-20mA
*VCE(sat)2
-
-
-140
mV IC=-1A, IB=-20mA
*VCE(sat)3
-
-
-270
mV IC=-2A, IB=-200mA
*VCE(sat)4
-
-
-440
mV IC=-5.5A, IB=-500mA
*VBE(sat)
-
-
-1.25
V
IC=-5.5A, IB=-500mA
*VBE(on)
-
-
-1.06
V
VCE=-1V, IC=-5.5A
*hFE1
100
-
-
VCE=-1V, IC=-10mA
*hFE2
100
-
300
VCE=-1V, IC=-1A
*hFE3
75
-
-
VCE=-1V, IC=-5A
*hFE4
-
35
-
VCE=-2V, IC=-20A
fT
-
100
-
MHz VCE=-10V, IC=-100mA, f=50MHz
Cob
-
122
-
pF VCB=-10V, IE=0, f=1MHz
GL949
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