GL9411A Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP SILICON PLANAR MEDIUM POWER high gain TRANSISTOR

CORPORATION ISSUED DATE :2006/11/20
REVISED DATE :
G L 9 4 11 A
PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
Description
The GL9411A is designed for general purpose switching and amplifier applications.
Features
Ô¦4 Amps continuous current, up to 10Amps pulse current
Ô¦Low saturation voltages
Ô¦High Gain
Package Dimensions
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0° 10°
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13°TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
к
Storage Temperature
Tstg
-55~+150
к
Collector to Base Voltage
VCBO
-30
V
Collector to Emitter Voltage
VCEO
-25
V
Emitter to Base Voltage
VEBO
-5
V
Collector Current (DC)
IC
-4
A
Collector Current (Pulse)
ICM
-10
A
Total Power Dissipation
PD
2.5
W
*The power which can be dissipated assuming the device is mounted in typical manner on a PCB with copper equal to 2 inches x 2 inches.
Electrical Characteristics (Ta = 25к, unless otherwise stated)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-30
-
-
V
IC=-100uA , IE=0
BVCES
-25
-
-
V
IC=-100uA
*BVCEO
-25
-
-
V
IC=-10mA, IB=0
BVCEV
-25
-
-
V
IC=-100uA, VEB=1V
BVEBO
-5
-
-
V
IE=-100uA ,IC=0
ICBO
-
-
-100
nA
VCB=-24V, IE=0
ICES
-
-
-100
nA
VCES=-20V
IEBO
-
-
-100
nA
VEB=-4V, IC=0
*VCE(sat)1
-
-
-80
mV IC=-100mA, IB=-1mA
*VCE(sat)2
-
-
-170
mV IC=-500mA, IB=-3mA
*VCE(sat)3
-
-
-240
mV IC=-1A, IB=-7mA
*VCE(sat)4
-
-
-260
mV IC=-2A, IB=-30mA
*VCE(sat)5
-
-
-350
mV IC=-4A, IB=-140mA
*VBE(sat)
-
-
-1.05
V
IC=-4A, IB=-140mA
*VBE(on)
-
-
1.0
V
VCE=-2V, IC=-4A
*hFE1
270
-
-
VCE=-2V, IC=-10mA
*hFE2
250
-
800
VCE=-2V, IC=-0.5A
*hFE3
195
-
-
VCE=-2V, IC=-2A
*hFE4
115
-
-
VCE=-2V, IC=-5A
GL9411A
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