GL9401A Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN SILICON PLANAR MEDIUM POWER high gain TRANSISTOR

CORPORATION ISSUED DATE :2006/11/20
REVISED DATE :
GL9401A
NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
Description
The GL9401A is designed for general purpose switching and amplifier applications.
Features
Ô¦5 Amps continuous current, up to 20Amps pulse current
Ô¦Low saturation voltages
Ô¦High Gain
Package Dimensions
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0° 10°
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13°TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
к
Storage Temperature
Tstg
-55~+150
к
Collector to Base Voltage
VCBO
80
V
Collector to Emitter Voltage
VCEO
30
V
Emitter to Base Voltage
VEBO
5
V
Collector Current (DC)
IC
5
A
Collector Current (Pulse)
ICM
20
A
Total Power Dissipation
PD
2.5
W
*The power which can be dissipated assuming the device is mounted in typical manner on a PCB with copper equal to 2 inches x 2 inches.
Electrical Characteristics (Ta = 25к, unless otherwise stated)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
80
-
-
V
IC=100uA , IE=0
*BVCES
80
-
-
V
IC=100uA
BVCEO
30
-
-
V
IC=10mA, IB=0
BVCEV
80
-
-
V
IC=10uA, VEB=1V
BVEBO
5
-
-
V
IE=100uA ,IC=0
ICBO
-
-
10
nA
VCB=35V, IE=0
ICES
-
-
10
nA
VCES=35V
IEBO
-
-
10
nA
VEB=4V, IC=0
*VCE(sat)1
-
-
60
mV IC=500mA, IB=10mA
*VCE(sat)2
-
-
100
mV IC=1A, IB=10mA
*VCE(sat)3
-
-
250
mV IC=3A, IB=30mA
*VCE(sat)4
-
-
330
mV IC=5A, IB=50mA
*VBE(sat)
-
-
1.05
V
IC=5A, IB=50mA
*VBE(on)
-
-
1.0
V
VCE=2V, IC=5A
*hFE1
280
-
-
VCE=2V, IC=10mA
*hFE2
300
-
-
VCE=2V, IC=0.5A
*hFE3
300
-
1200
VCE=2V, IC=1A
*hFE4
180
-
-
VCE=2V, IC=5A
GL9401A
Page: 1/2