GL882 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

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GL882
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GL882 is suited for the output stage of 2W audio, voltage regulator ,and relay driver.
Package Dimension
Absolute Maximum Ratings
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage at Ta=25
к_{Collector to Emitter Voltage at Ta=25}
к_{Emitter to Base Voltage at Ta=25к}
Collector Current at Ta=25к
Total Power Dissipation at Ta=25к
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Characteristics at
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE1
hFE2
FT
Cob
Min.
40
30
5
-
-
-
-
30
100
-
-
Ta = 25к
Typ.
-
-
-
-
-
-
-
-
-
90
45
Max.
-
-
-
1
1
0.5
2
-
500
-
-
Classification Of hFE
Rank
Range
Q
100-200
P
160-320
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0̓
10̓
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13̓TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Ratings
Unit
+150
ć
-55 ~ +150
ć
40
V
30
V
5.0
V
3.0
A
2
W
Unit
V
V
V
uA
uA
V
V
MHz
Pf
Test Conditions
IC=100uA ,IE=0
IC=1mA,IB=0
IE=10uA
VCB=30V
VEB=3V
IC=2A, IB=0.2A
IC=2A, IB=0.2A
VCE=2V, IC=20mA
VCE=2V, IC=1A
VCE=5V, IC=0.1A, f=100MHz
VCB=10V,IE=0, f=1MHz
E
250-500