GL5672 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN LOW FREQUENCY TRANSISTOR

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GL5672
NPN LOW FREQUENCY TRANSISTOR
Description
The GL5672 is a low frequency transistor . Excellent DC current gain characteristics.
Package Dimension
Absolute Maximum Ratings
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage at Ta=25к
Collector to Emitter Voltage at Ta=25к
Emitter to Base Voltage at Ta=25к
Collector Current at Ta=25к
Collector Current (PULSE)(note1)
Total Power Dissipation at Ta=25к
Note1 :single pulse, PW=10ms
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
IC
PD
Characteristics at Ta = 25к
Symbol
Min.
BVCBO
60
BVCEO
50
BVEBO
6
ICBO
-
IEBO
-
VCE(sat)
-
hFE
120
FT
-
Cob
-
Note 1:Measured using pulse current.
Typ.
-
-
-
-
-
0.1
-
210
25
Max.
-
-
-
0.1
0.1
0.35
400
-
-
Classification Of hFE
Rank
Range
A
120-240
B
200-400
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0̓
10̓
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13̓TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Ratings
Unit
+150
ć
-55 ~ +150
ć
60
V
50
V
6
V
3
A
5
A
2
W
Unit
V
V
V
uA
uA
V
MHz
pF
Test Conditions
IC=50uA ,IE=0
IC=1mA,IB=0
IE=50uA
VCB=60V
VEB=5V
IC=1A, IB=50mA (note1)
VCE=2V, IC=0.5A (note1)
VCE=2V, IE=0.5A, f=100MHz
VCB=10V,IE=0, f=1MHz