GL5551 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

1/2
GL5551
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GL5551 is designer for general purpose applications requiring high breakdown voltages.
Package Dimensions
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
Collector to Emitter Voltage
VCBO
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
REF.
A
C
D
E
I
H
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
0̓
10̓
0.60
0.80
0.25
0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min.
Max.
13̓TYP.
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
Ratings
Unit
+150
ć
-55 ~ +150
ć
180
V
160
V
6
V
600
mA
1.5
W
Characteristics at
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
hFE1
hFE2
hFE3
fT
Cob
Min.
180
160
6
-
-
-
-
-
-
80
80
50
100
-
Ta = 25к
Typ.
-
-
-
-
-
-
-
-
-
-
160
-
-
-
Max.
-
-
-
50
50
0.15
0.2
1
1
-
400
-
300
6
Unit
V
V
V
nA
nA
V
V
V
V
MHz
pF
Test Conditions
IC=100uA, IE=0
IC=1.0Ma, IB=0
IE=10uA, IC=0
VCB=120V , IE=0
VEB=4V , IC=0
IC=10mA, IB=1.0mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1MHz
Classification Of hFE
Rank
A
Range
80 - 200
N
100 - 250
C
160 - 400