GL4403 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP EPITAXIAL PLANAR TRANSISTOR

CORPORATION ISSUED DATE :2004/12/17
REVISED DATE :
GL4403
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GL4403 is designed for general purpose switching and amplifier applications.
Features
Ô¦Complementary to GL4401
ԦHigh Power Dissipation: 1500mW at 25ć
Ô¦High DC Current Gain: 100-300 at 150mA
Package Dimensions
SOT-223
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Collector to Base Voltage at Ta=25к
Collector to Emitter Voltage at Ta=25к
Emitter to Base Voltage at Ta=25к
Collector Current at Ta=25к
Total Power Dissipation at Ta=25к
Tstg
VCBO
VCEO
VEBO
IC
PD
Characteristics at Ta = 25к
Symbol
Min.
BVCBO
-40
BVCEO
-40
BVEBO
-5
ICEX
-
*VCE(sat)1
-
*VCE(sat)2
-
*VBE(sat)1
-750
*VBE(sat)2
-
*hFE1
30
*hFE2
60
*hFE3
100
*hFE4
100
*hFE5
20
fT
200
Cob
-
Classification Of hFE4
Rank
Range
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-400
-750
-950
-1.3
-
-
-
300
-
-
8.5
Unit
V
V
V
nA
mV
mV
mV
V
MHz
pF
A
100-210
B
190-300
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0̓
10̓
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13̓TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Ratings
Unit
+150
ć
-55 ~ +150
ć
-40
V
-40
V
-5
V
-600
mA
1.5
W
Test Conditions
IC=-100uA
IC=-1mA
IE=-10uA
VCE=-35V, VBE=-0.4V
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
VCE=-1V, IC=-0.1mA
VCE=-1V, IC=-1mA
VCE=-1V, IC=-10mA
VCE=-2V, IC=-150mA
VCE=-2V, IC=-500mA
VCE=-10V, IC=-20mA, f=100MHz
VCE=-10V, f=1MHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
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