GL4401 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP EPITAXIAL PLANAR TRANSISTOR

CORPORATION ISSUED DATE :2004/12/17
REVISED DATE :
GL4401
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GL4401 is designed for general purpose switching and amplifier applications.
Features
Ô¦Complementary to GL4403
ԦHigh Power Dissipation: 1500mW at 25ć
Ô¦High DC Current Gain: 100-300 at 150mA
Package Dimensions
SOT-223
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Collector to Base Voltage at Ta=25к
Collector to Emitter Voltage at Ta=25к
Emitter to Base Voltage at Ta=25к
Collector Current at Ta=25к
Total Power Dissipation at Ta=25к
Tstg
VCBO
VCEO
VEBO
IC
PD
Characteristics at Ta = 25к
Symbol
Min.
BVCBO
60
BVCEO
40
BVEBO
5
ICEX
-
*VCE(sat)1
-
*VCE(sat)2
-
*VBE(sat)1
750
*VBE(sat)2
-
*hFE1
20
*hFE2
40
*hFE3
80
*hFE4
100
*hFE5
40
fT
250
Cob
-
Classification Of hFE4
Rank
Range
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
400
750
950
1.2
-
-
-
300
-
-
6.5
Unit
V
V
V
nA
mV
mV
mV
V
MHz
pF
A
100-210
B
190-300
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0̓
10̓
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13̓TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Ratings
Unit
+150
ć
-55 ~ +150
ć
60
V
40
V
5
V
600
mA
1.5
W
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCE=35V, VBE= 0.4V
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=150mA
VCE=2V, IC=500mA
VCE=10V, IC=20mA, f=100MHz
VCB=5V, f=1MHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
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