GL3906 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP EPITAXIAL PLANAR TRANSISTOR

GL3906
CORPORATION
ISSUED DATE :2004/04/23
REVISED DATE :
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GL3906 is designed for general purpose Switching and Amplifier Applications.
Package Dimensions
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Symbol
Tj
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Tstg
VCBO
VCEO
VEBO
IC
PD
REF.
A
C
D
E
I
H
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
0̓
10̓
0.60
0.80
0.25
0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13̓TYP.
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
Ratings
Unit
+150
ć
-55~+150
ć
-40
V
-40
V
-5
V
-200
mA
1.5
W
Characteristics at Ta = 25к
Symbol
BVCBO
BVCEO
BVEBO
ICES
IEBO
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
hFE1
hFE2
hFE3
hFE4
hFE5
fT
Cob
Min.
-40
-40
-5
-
-
-
-
-0.65
-
60
80
100
60
30
250
-
Typ.
-
-
-
-
-
-
-0.2
-
-0.84
-
-
-
-
-
-
-
Note:Pulse test:PW<=300us, Duty Cycle<=2%
Max.
-
-
-
-50
-50
-0.25
-0.4
-0.85
-0.95
-
-
300
-
-
-
4.5
Unit
V
V
V
nA
nA
V
V
V
V
MHz
pF
Test Conditions
IC=-10uA
IC=-1mA
IE=-10uA
VCB=-30V
VEB=-3V
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VCE=-1V, IC=-0.1mA
VCE=-1V, IC=-1mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-50mA
VCE=-1V, IC=-100mA
VCE=-20V, IE=-10mA, f=100MHz
VCB=-5V, f=1MHz
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