GL159 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP SILICON PLANAR HIGH CURRENT TRANSISTOR

CORPORATION ISSUED DATE :2005/07/19
REVISED DATE :2005/12/09C
GL159
PNP SILICON PLANAR HIGH CURRENT TRANSISTOR
Description
The GL159 is designed for general purpose switching and amplifier applications.
Features
Ô¦5 Amps continuous current, up to 15Amps peak current
Ô¦Excellent gain characteristic specified up to 10Amps
Ô¦Very low saturation voltages
Package Dimensions
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0̓
10̓
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13̓TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
ć
Storage Temperature
Tstg
-55~+150
ć
Collector to Base Voltage
VCBO
-100
V
Collector to Emitter Voltage
VCEO
-60
V
Emitter to Base Voltage
VEBO
-6
V
Collector Current (DC)
IC
-5
A
Collector Current (Pulse)
IC
-15
A
Total Power Dissipation
PD
3
W
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4
square inch minimum.
Electrical Characteristics(Ta = 25к,unless otherwise stated)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-100
-
-
V
IC=-100uA , IE=0
*BVCEO
-60
-
-
V
IC=-10mA, IB=0
BVEBO
-6
-
-
V
IE=-100uA ,IC=0
ICBO
-
-
-50
nA
VCB=-80V, IE=0
ICES
-
-
-50
nA
VCES=-60V
IEBO
-
-
-10
nA
VEB=-6V, IC=0
*VCE(sat)1
-
-20
-50
mV IC=-100mA, IB=-10mA
*VCE(sat)2
-
-85
-140
mV IC=-1A, IB=-100mA
*VCE(sat)3
-
-155
-210
mV IC=-2A, IB=-200mA
*VCE(sat)4
-
-370
-460
mV IC=-5A, IB=-500mA
*VBE(sat)
-
-1.08
-1.24
V
IC=-5A, IB=-500mA
*VBE(on)
-
-0.935
-1.07
V
VCE=-1V, IC=-5A
*hFE1
100
200
VCE=-1V, IC=-10mA
*hFE2
100
200
300
VCE=-1V, IC=-2A
*hFE3
75
90
VCE=-1V, IC=-5A
*hFE4
10
25
VCE=-1V, IC=-10A
fT
-
120
-
MHz VCE=-10V, IC=-100mA, f=50MHz
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