GL158 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN SILICON PLANAR HIGH CURRENT TRANSISTOR

CORPORATION ISSUED DATE :2005/09/28
REVISED DATE :2005/12/09B
GL158
NPN SILICON PLANAR HIGH CURRENT TRANSISTOR
Description
The GL158 is designed for general purpose switching and amplifier applications.
Features
Ô¦6 Amps continuous current, up to 20Amps peak current
Ô¦Excellent gain characteristic specified up to 10Amps
Ô¦Very low saturation voltages
Package Dimensions
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0̓
10̓
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13̓TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
ć
Storage Temperature
Tstg
-55~+150
ć
Collector to Base Voltage
VCBO
150
V
Collector to Emitter Voltage
VCEO
60
V
Emitter to Base Voltage
VEBO
6
V
Collector Current (DC)
IC
6
A
Collector Current (Pulse)
IC
20
A
Total Power Dissipation
PD
3
W
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4
square inch minimum.
Electrical Characteristics(Ta = 25к,unless otherwise stated)
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
ICES
IEBO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VCE(sat)4
*VBE(sat)
*VBE(on)
*hFE1
*hFE2
*hFE3
*hFE4
fT
Min.
150
60
6
-
-
-
-
-
-
-
-
-
100
100
75
25
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
200
-
-
130
Max.
-
-
-
50
50
10
50
100
170
375
1.2
1.15
300
-
Unit
V
V
V
nA
nA
nA
mV
mV
mV
mV
V
V
MHz
Test Conditions
IC=100uA , IE=0
IC=10mA, IB=0
IE=100uA ,IC=0
VCB=120V, IE=0
VCES=60V
VEB=6V, IC=0
IC=100mA, IB=5mA
IC=1A, IB=50mA
IC=2A, IB=50mA
IC=6A, IB=300mA
IC=6A, IB=300mA
VCE=1V, IC=6A
VCE=1V, IC=10mA
VCE=1V, IC=2A
VCE=1V, IC=5A
VCE=1V, IC=10A
VCE=10V, IC=100mA, f=50MHz
GL158
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