GL157 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR

CORPORATION ISSUED DATE :2005/07/15
REVISED DATE :2005/08/02B
GL157
PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR
Description
The GL157 is designed for general purpose switching and amplifier applications.
Features
Ô¦-60 Volt V_CEO
Ô¦3 Amp continuous current
Ô¦Low saturation voltage
Package Dimensions
SOT-223
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current (DC)
IC
Collector Current (Pulse)
IC
Total Power Dissipation
PD
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0̓
10̓
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13̓TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Ratings
+150
-55~+150
-80
-60
-5
-3
-6
2
Unit
ć
ć
V
V
V
A
A
W
Electrical Characteristics(Ta = 25к,unless otherwise noted)
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*VBE(on)
*hFE1
*hFE2
*hFE3
*hFE4
fT
Cob
ton
toff
Min.
-80
-60
-5
-
-
-
-
-
-
70
100
80
40
100
-
-
-
Typ.
-
-
-
-
-
-150
-450
-0.9
-0.8
200
200
170
150
140
-
40
450
Max.
-
-
-
-100
-100
-300
-600
-1.25
-1.0
300
-
30
-
-
Unit
V
V
V
nA
nA
mV
mV
V
V
MHz
pF
ns
Test Conditions
IC=-100uA , IE=0
IC=-10mA, IB=0
IE=-100uA ,IC=0
VCB=-60V, IE=0
VEB=-4V, IC=0
IC=-1A, IB=-100mA
IC=-3A, IB=-300mA
IC=-1A, IB=-100mA
VCE=-2V, IC=-1A
VCE=-2V, IC=-50mA
VCE=-2V, IC=-500mA
VCE=-2V, IC=-1A
VCE=-2V, IC=-2A
VCE=-5V, IC=-100mA, f=100MHz
VCB=-10V, IE=0, f=1MHz
VCC=-10V, IC=-500mA, IB1=IB2=-50mA
*Measured under pulse condition. Pulse widthЉ300 s, Duty CycleЉ2%
Spice parameter data is available upon request for this device.
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