GL156 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR

CORPORATION ISSUED DATE :2004/12/29
REVISED DATE :2005/08/02B
GL156
NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR
Description
The GL156 is designed for general purpose switching and amplifier applications.
Features
Ô¦60 Volt V_CEO
Ô¦3 Amp continuous current
Ô¦Low saturation voltage
Package Dimensions
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0̓
10̓
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13̓TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
ć
Storage Temperature
Tstg
-55~+150
ć
Collector to Base Voltage
VCBO
80
V
Collector to Emitter Voltage
VCEO
60
V
Emitter to Base Voltage
VEBO
5
V
Collector Current (DC)
IC
3
A
Collector Current (Pulse)
IC
6
A
Total Power Dissipation
PD
2
W
Electrical Characteristics(Ta = 25к,unless otherwise noted)
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*VBE(on)
*hFE1
*hFE2
*hFE3
*hFE4
fT
ton
toff
Cob
Min.
80
60
5
-
-
-
-
-
-
70
100
80
40
140
-
-
-
Typ.
-
-
-
-
-
0.12
0.43
0.9
0.8
200
200
170
80
175
45
800
-
Max.
-
-
-
100
100
0.3
0.6
1.25
1.0
-
300
-
-
-
-
-
30
Unit
V
V
V
nA
nA
V
V
V
V
MHz
ns
pF
Test Conditions
IC=100uA, IE=0
IC=10mA, IB=0
IE=100uA, IC=0
VCB=60V, IE=0
VEB=4V, IC=0
IC=1A, IB=0.1A
IC=3A, IB=0.3A
IC=1A, IB=0.1A
IC=1A, VCE=2V
VCE=2V, IC=50mA
VCE=2V, IC=500mA
VCE=2V, IC=1A
VCE=2V, IC=2A
VCE=5V, IC=100mA, f=100MHz
VCC=10V, IC=500mA, IB1=IB2=50mA
VCB=10V, f=1MHz
*Measured under pulse condition. Pulse widthЉ300 s, Duty CycleЉ2%
Spice parameter data is available upon request for this device.
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