GJ1952 Datasheet, PDF (1/3 Pages) GTM CORPORATION – PNP HIGH SPEED SWITCHING TRANSISTOR

ISSUED DATE :2005/10/03
REVISED DATE :
GJ1952
PNP HIGH SPEED SWITCHING TRANSISTOR
Description
The GJ1952 is designed for high speed switching applications.
Features
Ô¦Low saturation voltage, typically VCE(sat) =-0.2V at IC/IB=-3A/-0.15A
Ô¦High speed switching, typically tf =0.15 s at IC=-3A
Ô¦Wide SOA
Ô¦Complements to GJ5103
Package Dimensions
TO-252
Absolute Maximum Ratings (TA=25к)
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current (DC)
IC
Collector Current (Pulse)
IC
Total Device Dissipation (TA=25к)
PD
Total Device Dissipation (TC=25к)
PD
Junction Temperature
TJ
Storage Temperature
Tstg
REF.
A
B
C
D
E
F
S
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
2.40
3.00
2.30 REF.
0.70
0.90
0.60
0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0
0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
Unit
-100
V
-60
V
-5
V
-5
A
-10
A
1
W
10
W
150
к
-55 ~ +150
к
Electrical Characteristics (TA = 25к unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
fT
Cob
-100
-
-
V
IC=-50uA, IE=0
-60
-
-
V
IC=-1mA, IB=0
-5
-
-
V
IE=-50uA, IC=0
-
-
-10
uA
VCB=-100V, IE=0
-
-
-10
uA
VEB=-5V, IC=0
-
-
-0.3
V
IC=-3A, IB=-0.15A
-
-
-0.5
V
IC=-4A, IB=-0.2A
-
-
-1.2
V
IC=-3A, IB=-0.15A
-
-
-1.5
V
IC=-4A, IB=-0.2A
120
-
270
VCE=-2V, IC=-1A
40
-
-
VCE=-2V, IC=-3A
-
80
-
MHz VCE=-10V, IE=0.5A, f=30MHz
-
130
-
pF
VCB=-10V, IE=0, f=1MHz
GJ1952
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