GJ1386 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP EPITAXIAL SILICON TRANSISTOR

ISSUED DATE :2005/07/25
REVISED DATE :
GJ1386
PNP EPITAXIAL SILICON TRANSISTOR
Description
The GJ1386 is designed for low frequency applications.
Features
Ô¦Low VCE(sat) =-0.55V(Typ.) (IC/IB=-4A/-0.1A)
Ô¦Excellent DC current gain characteristics
Package Dimensions
TO-252
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
*Collector Current (Pulse)
IC
Total Power Dissipation (TC=25к)
PD
REF.
A
B
C
D
E
F
S
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
2.40
3.00
2.30 REF.
0.70
0.90
0.60
0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0
0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
Unit
+150
к
-55~+150
к
-30
V
-20
V
-6
V
-5
A
-10
A
20
W
Electrical Characteristics (Ta = 25к)
Symbol
BVCBO
Min.
Typ.
Max.
Unit
-30
-
-
V
BVCEO
-20
-
-
V
BVEBO
-6
-
-
V
ICBO
IEBO
-
-
-500
nA
-
-
-500
nA
*VCE(sat)
-
-
-1
V
*hFE
82
-
580
fT
-
120
-
MHz
Cob
-
60
-
pF
Classification Of hFE
Rank
P
Range
82 - 180
Q
120 - 270
Test Conditions
IC=-50uA , IE=0
IC=-1mA, IB=0
IE=-50uA ,IC=0
VCB=-20V, IE=0
VEB=-5V, IC=0
IC=-4A, IB=-0.1A
VCE=-2V, IC=-0.5A
VCE=-6V, IE=50mA, f=30MHz
VCB=-20V, IE=0, f=1MHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
R
180 - 390
E
370 - 580
GJ1386
Page: 1/2